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Publications for Aleksandr Polyakov aleksandr.polyakov@touro.edu

  • Gurvitch, M. A., Polyakov, A., Luryi, S., & Shabalov, A. (2012). U.S. Patent No. 8,158,941. Washington, DC: U.S. Patent and Trademark Office.

  • Gurvitch, M., Luryi, S., Polyakov, A., & Shabalov, A. (2010). Nonhysteretic phenomena in the metal–semiconductor phase-transition loop of \hbox {VO}_{2} films for bolometric sensor applications. IEEE Transactions on Nanotechnology, 9(5), 647-652.
    doi: 10.1109/TNANO.2010.2047867

  • Gurvitch, M., Luryi, S., Polyakov, A., & Shabalov, A. (2010). Treating the Case of Incurable Hysteresis in VO2. In S. Luryi, J. Xu, & A. Zaslavsky (Eds.), Future trends in microelectronics: From nanophonics to sensors to energy (pp. 395-409). Oxford, UK: Wiley-Blackwell.

  • Gurvitch, M., Luryi, S., Polyakov, A., & Shabalov, A. (2009). Nonhysteretic behavior inside the hysteresis loop of VO2 and its possible application in infrared imaging. Journal of Applied Physics, 106(10), 104504. This material can be found here.

  • Gurvitch, M., Luryi, S., Polyakov, A., & Shabalov, A. (2008). Non-hysteretic branches inside the hysteresis loop in VO2 films for focal plane array imaging bolometers. ArXiv. Retrieved from http://arxiv.org/abs/0805.3566

  • Gurvitch, M., Luryi, S., Polyakov, A., Shabalov, A., Dudley, M., Wang, G., & Ge, S. (2007). VO2 films with strong semiconductor to metal phase transition prepared by the precursor oxidation process.  Journal of Applied Physics, 102(3), 033504. This material can be found here.